Gallium nitride semiconductor device is an electronic component that exploit the electronic properties of semiconductor material of gallium nitride. GaN is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes.The compound is a very hard material that has a Wurtzite crystal structure.

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Global Gallium Nitride (GaN) Semiconductor Device Market: Forecast by Type / Application / Region

The Gallium Nitride (GaN) Semiconductor Device market is expected to witness a steady growth over the forecast period owing to its wide used as a measurement instrument in industrial.

The worldwide market for Gallium Nitride (GaN) Semiconductor Device is expected to grow at a CAGR of roughly x% over the next five years, will reach x million US$ in 2023, from x million US$ in 2017, according to a new GIR (Global Info Research) study.

This report focuses on the Gallium Nitride (GaN) Semiconductor Device in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.

Global Gallium Nitride (GaN) Semiconductor Device Market:Key Players

NexGen Power Systems

Cree

Infineon

Qorvo

Macom

Microsemi

Mitsubishi Electric

Efficient Power Conversion

GaN Systems

Nichia

Epistar

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Related Information:

United States Gallium Nitride (GaN) Semiconductor Device Market 2018 Forecast to 2023

Europe Gallium Nitride (GaN) Semiconductor Device Market 2018 Forecast to 2023

North America Gallium Nitride (GaN) Semiconductor Device Market 2018 Forecast to 2023

Asia-Pacific Gallium Nitride (GaN) Semiconductor Device Market 2018 Forecast to 2023

China Gallium Nitride (GaN) Semiconductor Device Market 2018 Forecast to 2023

EMEA Gallium Nitride (GaN) Semiconductor Device Market 2018 Forecast to 2023

Global Gallium Nitride (GaN) Semiconductor Device Market 2018 Forecast to 2023

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