TOKYO - (ACN Newswire) - TANAKA Kikinzoku Kogyo K.K. (Head office: Chiyoda-ku, Tokyo; Representative Director & CEO: Koichiro Tanaka), which operates the TANAKA Precious Metals manufacturing business, announced today that TANAKA has established a two-stage film deposition process using the liquid ruthenium (Ru) precursor "TRuST." TRuST is a precursor that has excellent reactivity with both oxygen and hydrogen and can form high-quality ruthenium films. This process is a two-stage atomic layer deposition (ALD) process that uses hydrogen film formation to create a thin anti-oxidation film and oxygen for the deposition of a high-quality ruthenium film. It eradicates concerns that the substrate will become oxidized and, at the same time, can prevent the drop in ruthenium purity that occurs during hydrogen film deposition.The film deposition process was proposed by Professor Soo-Hyun Kim from the School of Materials Science and Engineering, College of Engineering, Yeungnam University in South Korea. The development and evaluation of the film deposition process were jointly conducted by Professor Kim and TANAKA Kikinzoku Kogyo.
This technology is expected to achieve greater miniaturization and improved durability of semiconductors. It can therefore be expected to be used in data centers and smartphones - which require even greater data processing capabilities - and contribute toward advanced technologies such as IoT and autonomous driving, which require sophisticated technological innovations.
Two-Stage Film Deposition Process Using Oxygen And Hydrogen
TANAKA Kikinzoku Kogyo is developing high-purity precious metal precursors?centered on ruthenium?for next-generation semiconductors. So far, single-stage film deposition using oxygen has been the mainstream process for film deposition. However, the company has now succeeded in a two-stage film deposition process using oxygen and hydrogen.
This two-stage film deposition process reduces the risk of surface oxidation of the base caused by hydrogen film deposition and allows high-purity film deposition that maintains ruthenium purity at almost 100% using oxygen film deposition. Furthermore, by forming the base first using hydrogen film deposition, the ruthenium film on top of the base created using oxygen film deposition will be smooth and dense, achieving a lower resistance than before.
Press release: https://www.acnnewswire.com/press-release/english/75967/